Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("International Union of Materials Research Societies (IUMRS)")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 512

  • Page / 21
Export

Selection :

  • and

IUMRS-ICEM2002Microelectronic engineering. 2003, Vol 66, Num 1-4, issn 0167-9317, 965 p.Conference Proceedings

IUMRS-ICEM 2002Optical materials (Amsterdam). 2003, Vol 23, Num 1-2, issn 0925-3467, 518 p.Conference Proceedings

Basic aspects of impurity getteringSUMINO, Koji.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 268-280, issn 0167-9317, 13 p.Conference Paper

Symposia V of IUMRS-ICAM'99YAN, Chunhua.Journal of alloys and compounds. 2000, Vol 311, Num 1, issn 0925-8388, 107 p.Conference Proceedings

Influence of argon gas pressure on the crystallinity of α-SiC epitaxial films fabricated by Nd YAG pulsed-laser depositionKUSUMORI, Takeshi; MUTO, Hachizo.Optical materials (Amsterdam). 2003, Vol 23, Num 1-2, pp 55-60, issn 0925-3467, 6 p.Conference Paper

Fabrication and characterization of anodic aluminum oxide templateXIN WANG; HAN, Gao-Rong.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 166-170, issn 0167-9317, 5 p.Conference Paper

Electron-hole drops in dislocational siliconDROZDOV, N; FEDOTOV, A.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 392-399, issn 0167-9317, 8 p.Conference Paper

Influence of imperfect surface on properties of ferroelectric thin filmTIANQUAN LÜ; WENWU CAO.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 818-824, issn 0167-9317, 7 p.Conference Paper

Electronic defect states of amorphous silicon nitrideLIN, Shu-Ya.Optical materials (Amsterdam). 2003, Vol 23, Num 1-2, pp 93-98, issn 0925-3467, 6 p.Conference Paper

Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser depositionZHU, J; LIU, Z. G.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 849-854, issn 0167-9317, 6 p.Conference Paper

Preparation of BaTiO3 nanoparticles in aqueous solutionsZIFEI PENG; YUN CHEN.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 102-106, issn 0167-9317, 5 p.Conference Paper

Investigation of quantum size effect of laser induced CdS quantum dots in sulfonic group polyaniline (SPAn) filmXIYING MA; WEILIN SHI.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 153-158, issn 0167-9317, 6 p.Conference Paper

Derivation of nonlinear susceptibility coefficients in antiferroelectricsWEBB, J. F; OSMAN, J.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 584-590, issn 0167-9317, 7 p.Conference Paper

Waveguides and waveguide arrays formed by incoherent light in photorefractive materialsZHIGANG CHEN; MARTIN, Hector.Optical materials (Amsterdam). 2003, Vol 23, Num 1-2, pp 235-241, issn 0925-3467, 7 p.Conference Paper

Influence of buffer layer on dielectric properties of (Ba1-xSrx)TiO3 thin filmsDONGWEN PENG; ZHONGYAN MENG.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 631-636, issn 0167-9317, 6 p.Conference Paper

In situ investigation for polarity-controlled epitaxy processes of GaN and A1N in MBE and MOVPE growthYOSHIKAWA, Akihiko; KE XU.Optical materials (Amsterdam). 2003, Vol 23, Num 1-2, pp 7-14, issn 0925-3467, 8 p.Conference Paper

Electronic structures of substitutional C and O impurities in wurtzite GaNCHANG LIU; JUNYONG KANG.Optical materials (Amsterdam). 2003, Vol 23, Num 1-2, pp 169-174, issn 0925-3467, 6 p.Conference Paper

Crystal orientation dependence of piezoelectric properties in LiNbO3 and LiTaO3WANG YUE; YI-JIAN, Jiang.Optical materials (Amsterdam). 2003, Vol 23, Num 1-2, pp 403-408, issn 0925-3467, 6 p.Conference Paper

Some experimental investigations of electromechanical properties of (PbZn1/3Nb2/3O3)0.92-(PbTiO3)0.08 relaxor single crystalsNOSEK, J; ERHART, J.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 733-737, issn 0167-9317, 5 p.Conference Paper

Structure and dielectric properties of bi-doped Ba0.6Sr0.4TiO3 thin films fabricated by sol-gel methodKIM, Kyoung-Tae; KIM, Chang-Il.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 835-841, issn 0167-9317, 7 p.Conference Paper

Etching characteristics of Bi4-xLaxTi3O12 (BLT) in inductively coupled CF4/Ar plasmaKIM, Dong-Pyo; KIM, Chang-Il.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 912-917, issn 0167-9317, 6 p.Conference Paper

Exchange coupled Nd2Fe14B/α-Fe nanocomposite magnets with fine α-Fe grainsYANG SEN; SONG XIAOPING; DU YOUWEI et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 121-127, issn 0167-9317, 7 p.Conference Paper

Novel porous materials for emerging applicationsZHAO, George X. S.Journal of material chemistry. 2006, Vol 16, Num 7, issn 0959-9428, 78 p.Conference Proceedings

Ballistic effect and new concept of Si wire photoluminescenceTORCHYNSKA, T. V; VOROBIEV, Yu. V.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 17-25, issn 0167-9317, 9 p.Conference Paper

A three-dimensional computer model for simulation of light-trapping effects in porous siliconZHENG, J. P; CHARBEL, P. T.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 224-232, issn 0167-9317, 9 p.Conference Paper

  • Page / 21